Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment

Toshiba Electronic Devices & Storage Corporation has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide (SiC) MOSFETs that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.

The new products reduce on-resistance per unit area (R_DS(ON)A) by about 43%, allowing the drain-source on-resistance gate-drain charge (R_DS(ON)Q_gd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%. This cuts the switching loss by about 20% and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.

Toshiba will continue to expand its line-up of power devices and to enhance its production facilities and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.

Applications

・Switching power supplies (servers, data center, communications equipment, etc.)
・EV charging stations
・Photovoltaic inverters
・Uninterruptible power supplies (UPS)

Features

・Low on-resistance per unit area (R_DS(ON)A)
・Low drain-source on-resistance gate-drain charge (R_DS(ON)Q_gd)
・Low diode forward voltage: V_DSF= -1.35V (typ.) @V_GS= -5V