SK hynix Inc. said it has completed development of the world’s first high-bandwidth memory 4 (HBM4) and is ready for mass production. The move positions the South Korean company to strengthen its lead in AI memory technology.
The company said Friday it has finalized development and production systems for HBM4, the latest generation of stacked DRAM designed to accelerate data processing. HBM has become a critical component in powering artificial intelligence, cloud computing, and high-performance systems.
“Completion of HBM4 development will be a new milestone for the industry,” said Joohwan Cho, head of HBM development. “By supplying products that meet customer needs in performance, power efficiency, and reliability, we will maintain a competitive position.”
HBM4 doubles the number of input/output terminals to 2,048, offering twice the bandwidth of the previous version. It also improves power efficiency by more than 40%, a key feature as data center energy use rises. SK hynix said the chip exceeds the JEDEC standard operating speed of 8Gbps, reaching over 10Gbps, and could raise AI service performance by up to 69%.
The company used its advanced MR-MUF stacking process and fifth-generation 10-nanometer technology to ensure production stability. Both techniques improve chip reliability, heat dissipation, and manufacturing yield.
“HBM4 is a symbolic turning point beyond the limits of current AI infrastructure,” said Justin Kim, president and head of AI infrastructure at SK hynix. “It will be a core product for overcoming technological challenges.”
Demand for high-bandwidth memory has surged with the rise of generative AI. Nvidia Corp. and other AI chipmakers have leaned heavily on suppliers such as SK hynix to secure faster, more efficient memory.
