SemiQ has expanded its third-generation QSiC silicon carbide (SiC) MOSFET portfolio with a new family of 1200 V S3 power modules that push current density and thermal performance for high-power industrial and electric vehicle (EV) systems. The launch targets designers of next-generation EV chargers, energy storage systems and motor drives seeking higher efficiency, simplified cooling and compact layouts.
The new release comprises seven modules spanning S3 half-bridge, B2T1 six-pack and B3 full-bridge configurations. The flagship device is a 62 mm S3 half-bridge module rated at 608 A with an on-resistance of 2.4 mΩ and a junction-to-case thermal resistance of 0.07ºC/W, enabling very high current density in a standard industrial footprint. A second S3 half-bridge device provides 428 A with 3.6 mΩ RDSon, giving system designers a choice between peak current and conduction loss optimization.
SemiQ’s B2T1 six-pack modules integrate the full three-phase power stage into a compact housing for motor drives and advanced AC-DC converters. These devices cover current ratings around 29–30 A with RDSon values from 19.5 to 82 mΩ, balancing efficiency, switching performance and layout simplicity in multi-kilowatt drives and converters.
On the single-phase side, the B3 full-bridge devices are aimed at inverters and high-voltage DC-DC converters where compact, high-density power stages are critical. The full-bridge line delivers up to 120 A with RDSon down to 8.6 mΩ, while a 95 A variant offers 16.6 mΩ, both combining low conduction losses with a thermal resistance of 0.28ºC/W to ease thermal design. These parameters position the family for EV charging, residential and commercial energy storage inverters, and industrial power supplies pursuing aggressive efficiency targets.
All Gen3 modules operate with an 18 V / -4.5 V gate-voltage window, lowering drive requirements compared with earlier generations and contributing to reduced switching losses. SemiQ specifies up to 30% reductions in specific on-resistance (RONsp) and turn-off energy (EOFF) versus prior devices, directly supporting higher switching frequencies and smaller magnetics. Devices undergo wafer-level gate-oxide burn-in and are breakdown tested above 1350 V to strengthen reliability margins in demanding high-voltage environments.
SemiQ positions the expanded Gen3 1200 V line as a building block for the “next wave” of EV and industrial platforms requiring higher power density without proportionally higher cooling overhead. The new S3, B2T1 and B3 modules are available immediately through SemiQ’s standard sales channels.
