Japan’s Renesas Electronics Corp. (TSE:6723) has unveiled three new 650V gallium nitride (GaN) field-effect transistors (FETs), marking a significant step forward in its power semiconductor portfolio. Designed for multi-kilowatt-class systems, the new devices target AI data centers, server power supplies, electric vehicle charging, battery backup, and renewable energy applications.
The release marks the first major product rollout since Renesas acquired GaN pioneer Transphorm in June 2024. The new Gen IV Plus devices—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are based on the SuperGaN® platform, a robust depletion-mode (d-mode) architecture known for high efficiency and ease of integration.
The FETs are built on a die that is 14% smaller than the previous generation, achieving a 30 mΩ on-resistance and delivering a 20% improvement in key performance metrics such as RDS(on)-Coss figure of merit. The devices also feature a higher 4V threshold voltage, not typically possible with enhancement-mode (e-mode) GaN, further enhancing switching performance.
“Our Gen IV Plus GaN devices represent a major milestone in the integration of Transphorm’s proven technology into Renesas’ broader portfolio,” said Primit Parikh, Vice President of Renesas’ GaN Business Division. “We aim to deliver full-system power solutions that combine these FETs with Renesas controllers and drivers, offering customers smaller, more efficient, and cost-effective designs.”
Offered in TOLT, TO-247, and TOLL packages, the devices provide flexibility in thermal and layout optimization for systems ranging from 1kW to 10kW, and even higher through device paralleling. TOLT and TOLL packages support both top-side and bottom-side thermal conduction, enabling compact designs with efficient heat dissipation, while the TO-247 caters to higher power and thermal demands.
The SuperGaN platform enables normally-off operation via an integrated low-voltage silicon MOSFET, making these FETs compatible with standard gate drivers. This eliminates the need for specialized drive circuitry, simplifying design and lowering adoption barriers for system developers transitioning from silicon or silicon carbide-based devices.
Renesas’ latest release comes amid a broader industry shift toward GaN technologies, which offer higher efficiency, faster switching speeds, and smaller footprints compared to traditional silicon and SiC semiconductors. The technology is increasingly used in high-performance applications, including electric vehicles, AI-driven data centers, and renewable energy systems.
The company says it has shipped over 20 million GaN devices to date, accumulating more than 300 billion hours of field operation. Unlike competitors focused mainly on low-power GaN, Renesas offers solutions for both high- and low-power applications, positioning it uniquely in the rapidly evolving power semiconductor landscape.
The new GaN FETs and the 4.2kW Totem-pole PFC GaN Evaluation Platform (RDTTP4200W066A-KIT) are now available for immediate deployment.
