Alpha and Omega Semiconductor Ltd. (Nasdaq: AOSL), a global supplier of power semiconductors, has introduced a new 25V MOSFET—the AONK40202—engineered for high power density in DC-DC applications. The device targets AI servers and data center power systems, where thermal efficiency and current handling are critical.
The AONK40202 leverages advanced DFN3.3×3.3 Source-Down packaging, which offers a larger source contact area to the printed circuit board and a center gate pin layout that simplifies routing and reduces gate driver trace length. These design enhancements improve thermal performance and reduce power loss, according to the company.
With a continuous drain current rating of 319A and a maximum junction temperature of 175°C, the AONK40202 addresses rising power demands in AI hardware infrastructure. Its on-state resistance (RDS(on)) is rated at just 0.7 milliohms at 10V, enabling improved switching efficiency and system-level power optimization.
“AI workloads are pushing hardware to new power and efficiency limits,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at AOS. “The AONK40202 enables better thermal management, higher power density, and more efficient use of board space—key requirements in today’s data center architectures.”
The new MOSFET is immediately available in production quantities, with pricing starting at $1.65 for 1,000-piece orders and a lead time of 14 to 16 weeks.
AOS’s latest product expansion underscores the company’s strategy to support next-generation computing demands through high-performance power semiconductors, as hyperscale data centers and AI acceleration drive new energy and thermal requirements.