Mitsubishi Electric Corp. announced plans to expand its high-voltage power semiconductor portfolio with the launch of two new modules in its 4.5kV/1,200A XB Series HVIGBT lineup, strengthening its position in global industrial and transportation power electronics. The modules—available in standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) versions—will be released on December 9 as the company targets rising demand for high-capacity, high-reliability components used in rail, heavy industry, and outdoor inverter systems.
The new HVIGBT units incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structures. By introducing enhanced electric-field relaxation and surface-charge-control designs, the company reduced chip termination regions by roughly 30% while increasing moisture resistance twentyfold compared with existing models. The improvements are aimed at supporting industrial systems exposed to humidity, temperature fluctuations, and varied outdoor conditions where reliability failures can lead to costly downtime.
Mitsubishi Electric says the modules also deliver approximately 5% lower total switching losses than previous models, improving inverter efficiency at a time when industrial operators are under pressure to cut energy use and emissions. Reverse-recovery safe-operating-area tolerance—critical for protecting devices from voltage spikes and overload conditions—has improved by a factor of 2.5, enhancing system robustness for high-power rail traction and other demanding applications.
The company plans to showcase the new HVIGBT modules at Nepcon Japan’s R&D and Manufacturing exhibition in Tokyo from Jan. 21–23, 2026, followed by appearances at major industry events in North America, Europe, China, India, and other markets. Mitsubishi Electric said the advancements support broader decarbonization goals by enabling more efficient and durable inverter systems across large-scale industrial equipment.
