Toshiba Electronic Devices & Storage Corporation has released four new 650V silicon carbide (SiC) MOSFETs incorporating its latest third-generation chip technology. Housed in a compact DFN8x8 surface-mount package, the models TW031V65C, TW054V65C, TW092V65C, and TW123V65C are now available for volume shipment.
Designed for industrial equipment such as switched-mode power supplies and photovoltaic power conditioners, the new devices offer significant size and efficiency advantages. The DFN8x8 package reduces volume by over 90% compared to conventional lead-inserted formats like TO-247, enabling higher power density and more compact designs.
The 4-pin DFN8x8 package supports a Kelvin connection for the gate drive, which minimizes internal inductance and enhances high-speed switching. Toshiba reports that the TW054V65C achieves approximately 55% lower turn-on loss and 25% lower turn-off loss compared to its existing models, leading to reduced energy loss in operation.
