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Mitsubishi Electric Powers Ahead with First 7GHz GaN Module for 5G-Advanced

Mitsubishi Electric’s 6.5W RF MOSFET Boosts Radio Performance

Mitsubishi Electric Corporation (TOKYO: 6503) has announced the world’s first successful performance verification of a compact 7GHz gallium nitride (GaN) power amplifier module (PAM) using 5G-Advanced communication signals. The breakthrough, achieved with the company’s proprietary high-performance GaN transistors and matching-circuit technology, sets a new benchmark for power efficiency in wireless communication components.

The prototype PAM measures just 12.0mm x 8.0mm, making it significantly smaller than conventional solutions. This compact design, combined with high-density component integration, is expected to enhance installation flexibility and reduce space and power requirements for next-generation 5G-Advanced base stations. The high-efficiency operation also contributes to reducing overall energy consumption—an important step toward supporting sustainable, large-scale network infrastructure for 5G and beyond.

The module’s capability to handle high-frequency 7GHz band signals positions it as a key component for operators preparing for the evolution to 6G. Mitsubishi Electric plans to continue research and development for commercial deployment in future telecom networks.

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