iDEAL Semiconductor, a fabless power semiconductor company, has signed a technology partner agreement with Richardson Electronics, Ltd., a global specialist in power and RF technologies, to expand the global reach of its advanced SuperQ-based power MOSFETs.
Under the partnership, iDEAL will leverage Richardson’s power systems expertise, design support, and specialized sales network to accelerate the adoption of its SuperQ MOSFETs across critical applications. The collaboration comes as iDEAL ramps up production and sampling of its 150V and 200V SuperQ MOSFET product lines.
Described by iDEAL as the first major advancement in silicon power semiconductors in decades, the patented SuperQ architecture delivers up to 5.7 times lower resistance and 2.1 times lower switching loss compared to leading conventional technologies. These improvements allow engineers to enhance system performance while maintaining the reliability and cost benefits of silicon, without shifting to more expensive wide bandgap alternatives.
The new MOSFETs target high-demand applications such as AI servers, USB power delivery, motor drives, and AC/DC and DC/DC conversion systems. iDEAL’s products are designed to deliver industry-leading figures of merit, including reduced switching charge (Qsw), output capacitance energy (EOSS), and resistance.
“Innovation in silicon has stalled as attention turned to materials like GaN and SiC,” said Mark Granahan, CEO and co-founder of iDEAL Semiconductor. “SuperQ proves silicon still has untapped potential. Partnering with Richardson Electronics allows us to rapidly scale and reach engineers facing new efficiency and performance challenges.”
Greg Peloquin, Executive Vice President of Power & Microwave Technologies at Richardson Electronics, called SuperQ “a significant breakthrough,” and said the firm is well-positioned to support iDEAL’s expansion.
The SuperQ-based MOSFETs are available for immediate deployment.
