GigaDevice Technology Co. introduced a new family of dual-voltage xSPI NOR Flash products designed to meet rising demand for high-speed, low-power memory in next-generation system-on-chip platforms. The GD25NX series, announced Tuesday, targets applications ranging from wearables and edge AI devices to data-center hardware and automotive electronics.
The Beijing-based chipmaker said the new series incorporates a 1.8-volt core with a 1.2-volt I/O interface, allowing direct connection to 1.2-volt SoCs without the need for external booster circuitry. The design eliminates additional components, reduces bill-of-materials costs and lowers overall system power consumption — an increasingly critical factor as device makers push for higher performance within tighter power budgets.
The launch extends GigaDevice’s portfolio of low-voltage Flash following its earlier 1.2-volt GD25NF and GD25NE families. The company is positioning the GD25NX line as its highest-performance dual-voltage offering to date, citing improvements in transfer speed, reliability features and energy efficiency.
The xSPI-compatible chips feature an octal SPI interface capable of operating at frequencies of up to 200 MHz in both single transfer rate and double transfer rate modes. Peak throughput reaches 400 MB/s, supported by a typical page-program time of 0.12 milliseconds and a sector-erase time of 27 milliseconds. According to GigaDevice, that represents a 30% gain in programming speed and a 10% faster erase cycle compared with conventional 1.8-volt octal Flash products.
To strengthen data integrity, the GD25NX integrates error correction code and CRC verification, and includes a data-strobe function designed to maintain signal stability in high-speed environments. The company said the added safeguards aim to meet stringent reliability requirements associated with data-center and automotive use cases.
Power efficiency remains a central focus of the series. GigaDevice said the 1.2-volt I/O architecture cuts read-mode power consumption by as much as 50% versus traditional 1.8-volt Octal SPI NOR Flash at similar performance levels. At 200 MHz, read currents can drop to 16 mA in single-transfer mode and 24 mA in double-transfer mode, positioning the device for adoption in battery-sensitive products such as wearables or portable AI hardware.
“The GD25NX series sets a new benchmark for combining low voltage with high performance in SPI NOR Flash,” said Ruwei Su, vice president and general manager of the company’s Flash business unit. He added that the architecture aligns with mainstream SoC trends toward lower-voltage interfaces and higher integration, helping customers streamline component counts and reduce system costs.
The new line will ship in 64-megabit and 128-megabit configurations and is offered in TFBGA24 and WLCSP packaging options. Samples of the 128-megabit GD25NX128J are already available for evaluation, while the 64-megabit version is in preparation.
