Toshiba Electronic Devices & Storage Corporation (Toshiba) has introduced two new automotive 40V N-channel power MOSFETs, designated as “XPJR6604PB” and “XPJ1R004PB,” featuring Toshiba’s innovative S-TOGL (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. These components are designed to enhance heat dissipation and reduce the size of automotive equipment. The launch marks the commencement of volume shipments.
The new MOSFETs address the demand for reliability in safety-critical applications such as autonomous driving systems, which rely on redundant designs. Such systems integrate numerous devices, necessitating efficient use of mounting space. The XPJR6604PB and XPJ1R004PB are built with Toshiba’s S-TOGL package (measuring 7.0mm x 8.44mm), featuring a post-less structure that unifies the source connective part and outer leads. The source leads adopt a multi-pin structure to lower package resistance.
Through the integration of the S-TOGL package and Toshiba’s U-MOS IX-H process, a notable 11% reduction in On-resistance is achieved in comparison to Toshiba’s TO-220SM (W) package product. This reduction in resistance comes alongside a 55% decrease in the required mounting area when compared to the TO-220SM(W) package. Additionally, the new package’s 200A drain current rating surpasses that of Toshiba’s similarly sized DPAK+ package, facilitating high current flow. The S-TOGL package design enables compact layouts, thereby contributing to size reduction of automotive equipment and efficient heat dissipation.
Considering the demanding temperature conditions in which automotive equipment operates, the reliability of surface mounting solder joints is of paramount importance. The S-TOGL package employs gull-wing leads that alleviate mounting stress, enhancing solder joint reliability.
Anticipating applications requiring higher-current operation involving parallel connections of multiple devices, Toshiba offers grouped shipments for the new products, based on gate threshold voltage. This ensures consistent characteristics within product groups.
Toshiba’s commitment extends beyond the launch of these MOSFETs. The company aims to expand its power semiconductor product range, supporting the pursuit of carbon neutrality through user-friendly, high-performance power devices.
Key Applications: • Automotive equipment: inverters, semiconductor relays, load switches, motor drives, etc.
Key Features: • New S-TOGL package: 7.0mm x 8.44mm (typ.) • Large drain current rating:
- XPJR6604PB: ID=200A
- XPJ1R004PB: ID=160A • AEC-Q101 qualified • IATF 16949/PPAP available • Low On-resistance:
- XPJR6604PB: RDS(ON)=0.53mΩ (typ.) (VGS=10V)
- XPJ1R004PB: RDS(ON)=0.8mΩ (typ.) (VGS=10V)
